Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy

Abstract

Homoepitaxial technique of metalorganic vapor phase epitaxy (MOVPE) was used for the growth of high quality epitaxial ZnO layers, Two conditions, proper thermal treatment of substrate prior to the growth for obtaining flat surface and high flow rate ratios of source materials, nitrous oxide (N2O) and diethylzinc (DEZn), were found to be important. Surface roughness below 1 nm as well as strong free exciton emission at 15 K of an MOVPE-ZnO layer on a bulk ZnO substrate have demonstrated the high potential of MOVPE for ZnO.