III-nitride semiconductors for intersubband optoelectronics: A review

  • Beeler M
  • Trichas E
  • Monroy E
  • 81

    Readers

    Mendeley users who have this article in their library.
  • 75

    Citations

    Citations of this article.

Abstract

III-nitride nanostructures have recently emerged as promising materials for new intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on infrared optical transitions between quantum-confined electronic states in the conduction band of GaN/Al(Ga)N nanostructures, namely quantum wells or quantum dots. The large conduction band offset (about 1.8 eV for GaN/AlN) and sub-picosecond ISB relaxation of III-nitrides render them appealing materials for ultrafast photonic devices in near-infrared telecommunication networks. Furthermore, the large energy of GaN longitudinal-optical phonons (92 meV) opens prospects for high-temperature THz quantum cascade lasers and ISB devices covering the 5–10 THz band, inaccessible to As-based technologies due to phonon absorption. In this paper, we describe the basic features of ISB transitions in III-nitride quantum wells and quantum dots, in terms of theoretical calculations, material growth, spectroscopy, resonant transport phenomena, and device implementation. The latest results in the fabrication of control-by-design devices such as all-optical switches, electro-optical modulators, photodetectors, and lasers are also presented.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • M. Beeler

  • E. Trichas

  • E. Monroy

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free