Improved equivalent circuit and analytical model for amorphous\nsilicon solar cells and modules

  • Merten J
  • Asensi J
  • Voz C
 et al. 
  • 42

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Abstract

An improved equivalent circuit for hydrogenated amorphous silicon
(a-Si:H) solar cells and modules is presented. It is based on the
classic combination of a diode with an exponential current-voltage
characteristic, of a photocurrent source plus a new term representing
additional recombination losses in the i-layer of the device. This
model/equivalent circuit matches the I(V) curves of a-Si:H cells over an
illumination range of six orders of magnitude. The model clearly
separates effects related to the technology of the device (series and
parallel resistance) and effects related to the physics of the p-i-n
junction (recombination losses). It also allows an effective μτ
product in the i-layer of the device to be determined, characterizing
its state of degradation

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Authors

  • J. Merten

  • J.M. Asensi

  • C. Voz

  • a.V. Shah

  • R. Platz

  • J. Andreu

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