Journal article

Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design

Wang P, Cao B, Wei W, Gan Z, Liu S ...see all

Solid-State Electronics, vol. 54, issue 3 (2010) pp. 283-287

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Abstract

The method of surface patterning of indium tin oxide (ITO) transparent current layer has been investigated in this study to improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs). Optimized design of the patterns on ITO has been performed by ray-tracing simulation and LEDs with different periodic micro-circle structures on ITO have been fabricated. The light output power of the LEDs with the optimal patterns on ITO exhibited 46.4% enhancement compared to the conventional LEDs at 20 mA injection current without electrical degradation. Detailed processing parameters are also provided. It is indicated from the results that the surface-patterned ITO technique could have potential applications in high-power GaN-based LEDs. © 2009 Elsevier Ltd. All rights reserved.

Author-supplied keywords

  • GaN
  • Indium tin oxide
  • Light-emitting diodes
  • Ray-tracing simulation
  • Surface patterning

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Authors

  • Pei Wang

  • Bin Cao

  • Wei Wei

  • Zhiyin Gan

  • Sheng Liu

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