Multi-layer barrier structure is suggested as an alternative approach to single-layer polarization matching barrier structure for the reduction of efficiency droop. Time resolved photoluminescence measurement showed that polarization field was reduced by 19% in the multilayer barrier light emitting diodes structures. Optical power measurements on packaged devices showed overall increase of external quantum efficiency for all currents up to the current density of 150 A/ cm2. Increase of optical power is attributed to reduced polarization and decreased current overflow to p -side cladding layers. These results provide additional evidences that polarization is important in addressing the droop problem. © 2009 American Institute of Physics.
CITATION STYLE
Chung, H. J., Choi, R. J., Kim, M. H., Han, J. W., Park, Y. M., Kim, Y. S., … Schubert, E. F. (2009). Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers. Applied Physics Letters, 95(24). https://doi.org/10.1063/1.3276066
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