Influence of the hole transport layer on the performance of organic light-emitting diodes

  • Giebeler C
  • Antoniadis H
  • Bradley D
 et al. 
  • 1


    Mendeley users who have this article in their library.
  • N/A


    Citations of this article.


We investigate the influence of the hole-transporting layer (HTL) on the performance of bilayer vapor-deposited organic light-emitting diodes. Three different HTL materials were used: m-MTDATA, triphenyl-diamine, and naphthyl-phenyl-diamine. In all cases, Alq3 was the electron-transporting layer (ETL). We measure and compare the current density-voltage (J–V) and luminance–voltage (L–V) characteristics of these devices and we conclude that the operating voltage is controlled by the type of HTL used and the nature of the hole-injecting indium tin oxide/HTL interface. We found that the device quantum efficiency depends not only on the electron transport characteristics of the ETL but also on the energetics of the HTL/ETL interface. Analysis of the J–V characteristics suggests that current flow in bilayer devices cannot be described sufficiently by a single carrier theory; both hole and electron currents should be considered. © 1999 American Institute of Physics.

Author-supplied keywords

  • current density;electron mobility;vacuum deposited

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • Carsten Giebeler

  • H Antoniadis

  • Donal D C Bradley

  • Y Shirota

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free