InGaAsP p-i-n photodiodes with low dark current and small capacitance

Abstract

p-i-n photodiodes with ND as low as 1–2 × 1015 cm−3 in the I-region were fabricated from InGaAsP (λ = 1.26 µm). At − 20 V, the 2.5 µm I-region of the 150 µm diameter mesas was completely swept out, the junction capacitance was below 1 pF, the dark current was less than 0.2 nA and the external quantum efficiency was 63% without a.r. coatings. © 1979, The Institution of Electrical Engineers. All rights reserved.