Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency

  • Zhong J
  • Chen H
  • Saraf G
 et al. 
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Abstract

Enhancement of light extraction from an integrated ZnO nanotips/GaN light emitting diode (LED) is demonstrated. The device is composed of a GaN LED with a Ga-doped ZnO (GZO) transparent conductive layer and ZnO nanotips grown on GZO for light extraction. The light output power of a ZnO nanotips/GZO/GaN LED exhibits 1.7 times enhancement, in comparison with a conventional Ni/Au p-metal LED. The higher emission efficiency is attributed to the enhanced light transmission and scattering in the ZnO/GaN multilayer. (C) 2007 American Institute of Physics.

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Authors

  • J. Zhong

  • H. Chen

  • G. Saraf

  • Y. Lu

  • C. K. Choi

  • J. J. Song

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