Intermodulation distortion in MEMS capacitive switches under high RF power

  • Molinero D
  • Palego C
  • Luo X
 et al. 
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Abstract

Intermodulation distortion in MEMS capacitive switches was analyzed both theoretically and experimentally as a function of tone spacing and RF power. The theory and experiment consistently showed that, under high RF power, additional distortion was caused by self-heating of the switch membrane by the RF power, which decreased the membrane spring constant significantly. The results implied that, well before the input RF power triggers self-actuation, the distortion might increase rapidly to an unacceptable level, so that the power-handling capacity of MEMS capacitive switches would be limited by intermodulation distortion instead of self-actuation.

Author-supplied keywords

  • Capacitors
  • Distortion measurement
  • Microelectromechanical systems
  • Radio frequency
  • Switches

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Authors

  • D. Molinero

  • C. Palego

  • X. Luo

  • Y. Ning

  • G. Ding

  • J. C M Hwang

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