Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

  • Dai Q
  • Schubert M
  • Kim M
 et al. 
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Abstract

Room-temperature photoluminescence measurements are performed on GaInN/GaN multiple quantum wells grown on GaN-on-sapphire templates with different threading-dislocation densities. The internal quantum efficiencies as a function of carrier concentration and the non-radiative coefficients are obtained.

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