Intrinsic electronically active defects in transition metal elemental oxides

  • Lucovsky G
  • Seo H
  • Lee S
 et al. 
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Gate dielectrics comprised of nanocrystalline HfO2in gate stacks with thin SiO2/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO2and other transition metal elemental oxides are assigned to O-atom divacancies, clustered at internal grain boundaries. Three engineering solutions for defect reduction are identified: i) deposition of ultra-thin,

Author-supplied keywords

  • Ab initio molecular orbital theory
  • Coherent π-bonding interactions
  • Crystal field and Jahn-Teller d-state splittings
  • Intrinsic defect states
  • Nanocrystalline length scales of order
  • Transition metal oxides
  • Valence and conduction band states

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