Investigation of the vertical IMOS-transistor by device simulation

  • Kraus R
  • Jungemann C
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Abstract

The characteristics of vertical IMOS transistors are investigated with the help of 2D device simulations. The obtained results show the influence of different device parameters like doping concentration, charge carrier lifetime, and size of the floating body. Furthermore the static and dynamic switching behaviour is presented.

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Authors

  • Rainer Kraus

  • Christoph Jungemann

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