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Investigation of the vertical IMOS-transistor by device simulation

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (2009) 281-284
DOI: 10.1109/ULIS.2009.4897591
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Abstract

The characteristics of vertical IMOS transistors are investigated with the help of 2D device simulations. The obtained results show the influence of different device parameters like doping concentration, charge carrier lifetime, and size of the floating body. Furthermore the static and dynamic switching behaviour is presented. ©2009 IEEE.

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Kraus, R., & Jungemann, C. (2009). Investigation of the vertical IMOS-transistor by device simulation. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (pp. 281–284). https://doi.org/10.1109/ULIS.2009.4897591

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