Atom Probe Tomography (APT) consists of analyzing a needle-shaped specimen on an atom-by-atom basis. In recent years, instruments have become commercially available, enabling the sequential analysis of the same specimen in both laser- and voltage-pulsed modes. In this contribution, a comparison of field evaporated end-forms as a function of the voltage and laser power is presented for silicon. Electron microscopy is utilized for visual inspection of the final tip end-forms. The field of evaporation for silicon is calculated based on these radius measurements for voltage and laser pulsing. Electron microscopy and analysis of the atom probe data show that the specimen end-forms for both pulsing modes can be different. We have observed two effects on the shape of a field-ion emitter when irradiated by a focused laser beam. One is a change in the 3-dimensional topology of the emitter due to different crystallographic orientations. Secondly, exposure to focused laser beam from one side may lead to a non-hemispherical tip shape especially when reasonably high laser energy is utilized. For comparison purposes to the laser mode, the voltage pulse evaporated tip end form is also analyzed for different specimen temperatures. Consequently, evaporation fields are calculated for different temperatures and laser conditions for silicon. © 2008 Elsevier B.V. All rights reserved.
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