Iron (III) Chloride doping of CVD graphene

Abstract

Chemical doping has been shown as an effective method of reducing the sheet resistance of graphene. We present the results of our investigations into doping large area chemical vapor deposition graphene using Iron (III) Chloride (FeCl3). It is shown that evaporating FeCl3 can increase the carrier concentration of monolayer graphene to greater than 1014 cm-2 and achieve resistances as low as 72 Ω sq-1. We also evaluate other important properties of the doped graphene such as surface cleanliness, air stability, and solvent stability. Furthermore, we compare FeCl3 to three other common dopants: Gold (III) Chloride (AuCl3), Nitric Acid (HNO3), and TFSA ((CF3SO2)2NH). We show that compared to these dopants, FeCl3 can not only achieve better sheet resistance but also has other key advantages including better solvent stability.