Kinetics of Phosphorus Predeposition in Silicon Using POCl[sub 3]

  • Negrini P
  • 21


    Mendeley users who have this article in their library.
  • 43


    Citations of this article.


Phosphorus predeposition in silicon using a POC13 source and oxidizing

conditions has been studied over a wide range of temperature (850~176

and doping gas compositions, by determining the total and electrically

dopant and the thickness of the surface oxide. The dependence of the

of electrically inactive phosphorus on temperature, time, and doping

composition was studied; and it is reported that phosphide precipitation

place in the course of the predeposition. These observations lead
to the conclusion

that the flux of phosphorus is not limited by the solubility of this

element in silicon, and this is confirmed by the results of the study
of the

kinetics, which are reported. They show that the rate-determining
process of

phosphorus predeposition and the associated oxide growth is the diffusion

across the oxide layer. The amount Q of dopant predeposited in an

process increases with a parabolic time law

Q -- ~/Ko exp ( -EK/ kT) 9t

and a simil~ar behavior is observed for the oxide thickness

Xo : ~/Bo exp ( - -EB/kT) 9t

It is shown that EK and EB are constants in a wide range of experimental

conditions, and the dependence of Ko and Bo on gas composition is

A method, based on surface resistivity measurements after drive-in,

provides quantitative determinations of the predeposited phosphorus
in satisfactory

agreement with activation analysis, is reported in the Appendix.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • P. Negrini

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free