Kinetics of Phosphorus Predeposition in Silicon Using POCl[sub 3]

  • Negrini P
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Abstract

Phosphorus predeposition in silicon using a POC13 source and oxidizing

conditions has been studied over a wide range of temperature (850~176

and doping gas compositions, by determining the total and electrically
active

dopant and the thickness of the surface oxide. The dependence of the
fraction

of electrically inactive phosphorus on temperature, time, and doping
gas

composition was studied; and it is reported that phosphide precipitation
takes

place in the course of the predeposition. These observations lead
to the conclusion

that the flux of phosphorus is not limited by the solubility of this

element in silicon, and this is confirmed by the results of the study
of the

kinetics, which are reported. They show that the rate-determining
process of

phosphorus predeposition and the associated oxide growth is the diffusion

across the oxide layer. The amount Q of dopant predeposited in an
isothermal

process increases with a parabolic time law

Q -- ~/Ko exp ( -EK/ kT) 9t

and a simil~ar behavior is observed for the oxide thickness

Xo : ~/Bo exp ( - -EB/kT) 9t

It is shown that EK and EB are constants in a wide range of experimental

conditions, and the dependence of Ko and Bo on gas composition is
reported.

A method, based on surface resistivity measurements after drive-in,
which

provides quantitative determinations of the predeposited phosphorus
in satisfactory

agreement with activation analysis, is reported in the Appendix.

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Authors

  • P. Negrini

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