Few-layer tungsten diselenide (WSe 2 ) is attractive as a next-generation electronic material as it\r exhibits modest carrier mobilities and energy band gap in the visible spectra, making it appealing\r for photovoltaic and low-powered electronic applications. Here we demonstrate the scalable synthesis\r of large-area, few-layer WSe 2 via replacement of oxygen in hexagonally stabilized tungsten oxide\r films using dimethyl selenium. Cross-sectional transmission electron microscopy reveals successful\r control of the final WSe 2 film thickness through control of initial tungsten oxide thickness, as\r well as development of layered films with grain sizes up to several hundred nanometers. Raman\r spectroscopy and atomic force microscopy confirms high crystal uniformity of the converted WSe 2 ,\r and time domain thermo-reflectance provide evidence that near record low thermal conductivity is\r achievable in ultra-thin WSe 2 using this method.
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