Light induced changes in the defect structure of a-Si:H

  • Britton D
  • Sigcau Z
  • Comrie C
 et al. 
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Abstract

The effect of light-soaking, using a simulated daylight spectrum (colour temperature 5800 K) on the crystallinity, defect structure, and total hydrogen concentration of a-Si:H grown by HW-CVD is being investigated in an ongoing project. In this article, positron beam based electron momentum spectroscopy is applied to monitor the evolution of the open-volume defect structure after each illumination stage. The results indicate an initial increase in free volume at dangling-bond complexes on illumination, with no indication of a change in defect concentration or generation of larger microvoids. On further illumination, there is a reduction in the low electron momentum fraction, which is not accompanied by a similar change in the free-volume. This can be interpreted as a reconfiguration of the hydrogen in the dangling-bond complex, followed by its release into a mobile state. ?? 2003 Elsevier Science B.V. All rights reserved.

Author-supplied keywords

  • Light-induced degredation
  • Positron annihilation
  • Structural defects
  • Structural relaxation

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Authors

  • D. T. Britton

  • Z. Sigcau

  • C. M. Comrie

  • D. F. Kanguwe

  • E. Minani

  • D. Knoesen

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