Linear strain-gradient effect on the energy bandgap in bent CdS nanowires

  • Fu Q
  • Zhang Z
  • Kou L
 et al. 
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Abstract

Although possible non-homogeneous strain effects in semiconductors have been investigated for over a half century and the strain-gradient can be over 1% per micrometer in flexible nanostructures, we still lack an understanding of their influence on energy bands. Here we conduct a systematic cathodoluminescence spectroscopy study of the strain-gradient induced exciton energy shift in elastically curved CdS nanowires at low temperature, and find that the red-shift of the exciton energy in the curved nanowires is proportional to the strain-gradient, an index of lattice distortion. Density functional calculations show the same trend of band gap reduction in curved nanostructures and reveal the underlying mechanism. The significant linear strain-gradient effect on the band gap of semiconductors should shed new light on ways to tune optical-electronic properties in nanoelectronics.

Author-supplied keywords

  • Bending deformation
  • Cathodoluminescence
  • CdS nanowire
  • Strain-gradient effect

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Authors

  • Qiang Fu

  • Zi Yue Zhang

  • Liangzhi Kou

  • Peicai Wu

  • Xiaobing Han

  • Xinli Zhu

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