Linearity of GaN HEMT RF power amplifiers - a circuit perspective

  • Sarbishaei H
  • Wu D
  • Boumaiza S
  • 16

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Abstract

In this paper, the nonlinearity generation mechanisms causing AM/AM and AM/PM in GaN power amplifier are analyzed from a circuit perspective. The nonlinear device transconductance is found to be the primary source of slow compression in GaN PA's AM/AM characteristic, while the nonlinear input capacitance is the primary source of AM/PM distortion. Using two 800 MHz GaN PAs, we show that matching networks optimized for linearity can minimize a PA's nonlinear distortions and memory effects.

Author-supplied keywords

  • AM/AM
  • AM/PM
  • Capacitance
  • Frequency measurement
  • GaN power amplifiers
  • Gallium nitride
  • HEMTs
  • Harmonic analysis
  • Linearity
  • Logic gates
  • memory effect
  • static linearity

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Authors

  • Hassan Sarbishaei

  • David Yu-Ting Wu

  • Slim Boumaiza

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