Abstract
The room temperature photoluminescence emitted by InGaAs/GaPAsSb quantum well structures grown on GaAs are investigated. It was observed that such room temperature photoluminescence have wavelengths between 1.2 and 1.5 μm. The emission wavelengths of the photoluminescence were influenced by the composition of the quantum well structures' GaPAsSb layer. The ability of InGaAs/GaPAsSb quantum well structures to emit photoluminescence at room temperature is attributed to their spatially indirect interband transition, in which their electron and wave functions have large spatial overlap.
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CITATION STYLE
Dowd, P., Braun, W., Smith, D. J., Ryu, C. M., Guo, C. Z., Chen, S. L., … Zhang, Y. H. (1999). Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs. Applied Physics Letters, 75(9), 1267–1269. https://doi.org/10.1063/1.124663
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