Low ballistic mobility in submicron HEMTs

  • Shur M
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Abstract

Ballistic effects in short channel high electron mobility
transistors (HEMTs) greatly reduce the field effect mobility compared to
that in long gate structures. This reduction is related to a finite
electron acceleration time in the channel under the device gate. As an
example, the field effect mobility at room temperature in 0.15-μm
gate AlGaAs/GaAs HEMTs cannot exceed 3000 cm2/V-s. These
predictions are consistent with the values of the field effect mobility
extracted from the measured AlGaAs/GaAs HEMT current-voltage
characteristics

Author-supplied keywords

  • Ballistic effects
  • High electron mobility transistors (HEMTs)
  • Mobility

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