Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits

  • Liang D
  • Fang A
  • Park H
 et al. 
  • 97


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We report a low-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2 for Si-compound semiconductor integration. A record-thin interfacial oxide layer of 60 nm demonstrates sufficient capability for gas byproduct diffusion and absorption, leading to a high surface energy of 2.65 J/m2 after a 2-h 300°C anneal. O2 plasma treatment and surface chemistry optimization in dilute hydrofluoric (HF) solution and NH4OH vapor efficiently suppress the small-size interfacial void density down to 2 voids/cm2, dramatically increasing the wafer-bonded device yield. Bonding-induced strain, as determined by x-ray diffraction measurements, is negligible. The demonstration of a 50 mm InP epitaxial layer transferred to a silicon-on-insulator (SOI) substrate shows the promise of the method for wafer-scale applications.

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  • Di Liang

  • Alexander W. Fang

  • Hyundai Park

  • Tom E. Reynolds

  • Keith Warner

  • Douglas C. Oakley

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