The luminescence of some oxidic bismuth and lead compounds

  • Timmermans C
  • Blasse G
  • 10

    Readers

    Mendeley users who have this article in their library.
  • 125

    Citations

    Citations of this article.

Abstract

The luminescence properties of the bismuth compounds Bi2Ge3O9, Bi12MO20(M = Ge, Ti), and Bi2Al4O9and of the lead compounds PbGe3O7and PbM2O4(M = Al, Ga) are reported and discussed. Bi12MO20and probably PbGe3O7show semiconductor-type luminescence. For Bi12MO20blue and red emission bands are reported which both are ascribed to radiative recombination at (deep) defect centre levels in the band gap. The blue emission originates probably from surface defects. The other compounds show broad emission and excitation bands with large Stokes shifts. The transitions occur on one and the same Bi3+(Pb2+) ion. From decay time measurements it is found that the energy difference between the two lowest excited levels is very small for all compounds. The large Stokes shifts and small trap depths are discussed in terms of the asymmetrical coordination of the 6s2ions in the compounds under discussion. It is concluded that asymmetrically surrounded Bi3+ions give rise to luminescence which is characterized by a broad emission band which shows a very large Stokes shift ({reversed tilde equals}2 eV). © 1984.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Get full text

Authors

  • C. W.M. Timmermans

  • G. Blasse

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free