Mapping of axial strain in InAs/InSb heterostructured nanowires

  • Patra A
  • Panda J
  • Roy A
 et al. 
  • 12


    Mendeley users who have this article in their library.
  • 3


    Citations of this article.


The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the transverse optical phonon mode along the axis of these nanowires. We attribute the observed shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free