Mean gain of avalanche photodiodes in a dead space model

  • Spinelli A
  • Lacaita A
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Abstract

Based on a first order expansion of the recursive equations, we
derive approximate analytical expressions for the mean gain of avalanche
photodiodes accounting for dead space effects. The analytical solutions
are similar to the popular formula first obtained in local
approximation, provided that the ionization coefficients, α and
β, are replaced with suitable effective ionization coefficients
depending on dead space. The approximate solutions are in good agreement
with the exact numerical solutions of the recursive equations for p-i-n
devices as well as for photodiodes with nonconstant electric field
profile. We also show that dead space causes non negligible differences
between the values of the effective ionization coefficients entering in
carrier continuity equations, the carrier ionization probability per
unit length and the ionization coefficients derived by experimenters
from multiplication measurements

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Authors

  • Alessandro Spinelli

  • Andrea L. Lacaita

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