MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy

  • Craft H
  • Ihlefeld J
  • Losego M
 et al. 
  • 19

    Readers

    Mendeley users who have this article in their library.
  • 49

    Citations

    Citations of this article.

Abstract

We report on the epitaxial deposition of magnesium oxide films with [111] crystallographic orientation on (0002) GaN by molecular beam epitaxy. Specifically, we use an adsorption controlled growth mechanism to initiate the growth process. Electron diffraction shows a spotty intense pattern without intensity fluctuations during growth and evidence of in-plane twinning. X-ray diffraction reveals the films to be epitaxial with full width at half maximum values of 0.3°, 0.5°, and 1° in 2 θ , ϕ , and χ circles, respectively. Wet etching of the GaN surface with a HCl:HF mixture prior to growth is critical for achieving high crystalline quality. Epitaxialgrowth is observed between room temperature and 650 ° C , with negligible changes in crystalline quality with increased temperature. Atomic force microscopy analysis shows grainy surfaces with feature sizes near 10 nm and rms roughness values of 1.4 Å over 1 μ m 2 areas. X-ray diffraction analysis suggests MgO film stability up to 850 ° C in ex situ air annealing.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free