We report on the epitaxial deposition of magnesium oxide films with  crystallographic orientation on (0002) GaN by molecular beam epitaxy. Specifically, we use an adsorption controlled growth mechanism to initiate the growth process. Electron diffraction shows a spotty intense pattern without intensity fluctuations during growth and evidence of in-plane twinning. X-ray diffraction reveals the films to be epitaxial with full width at half maximum values of 0.3°, 0.5°, and 1° in 2 θ , ϕ , and χ circles, respectively. Wet etching of the GaN surface with a HCl:HF mixture prior to growth is critical for achieving high crystalline quality. Epitaxialgrowth is observed between room temperature and 650 ° C , with negligible changes in crystalline quality with increased temperature. Atomic force microscopy analysis shows grainy surfaces with feature sizes near 10 nm and rms roughness values of 1.4 Å over 1 μ m 2 areas. X-ray diffraction analysis suggests MgO film stability up to 850 ° C in ex situ air annealing.
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