Microscopic and electronic roles of B in CoFeB-based magnetic tunnel junctions

  • Han Y
  • Han J
  • Choi H
 et al. 
  • 13


    Mendeley users who have this article in their library.
  • 9


    Citations of this article.


The giant tunneling magnetoresistance (TMR) in lattice-matched crystalline magnetic tunnel junctions (MTJs) strongly depends on the majority-spin [capital Delta]1 bands of ferromagnetic electrodes. Our synchrotron radiation X-ray photoelectron spectroscopy and first-principles calculations show that B atoms suppress the formation of CoFe-O during CoFeB deposition in CoFeB/MgO/CoFeB MTJs, thereby lessening an effect that significantly degrades the majority-spin [capital Delta]1 bands, and that CoFe-B has properties superior to CoFe-O in electron conduction in the majority-spin [capital Delta]1 bands. During annealing, some of the B in CoFeB diffuses out, enhancing the valence bands of metallic CoFe, which improves the TMR value even further. Our present work elucidates the microscopic and electronic roles of B in MgO MTJs with CoFeB electrodes.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free