Mode locking of a GaInN semiconductor laser with an internal saturable absorber

  • Yoshita M
  • Kuramoto M
  • Ikeda M
 et al. 
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Abstract

We demonstrated the mode locking of an external-cavity 404 nm GaInN semiconductor laser diode with an internal saturable absorber layer for the first time. Stable passive mode locking was confirmed at a repetition rate of 840 MHz. Furthermore, hybrid mode-locking operation incorporating rf current modulation generated optical pulses of 20 ps duration and 0.4 W peak power.

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Authors

  • Masahiro Yoshita

  • Masaru Kuramoto

  • Masao Ikeda

  • Hiroyuki Yokoyama

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