Mode locking of a GaInN semiconductor laser with an internal saturable absorber

Abstract

We demonstrated the mode locking of an external-cavity 404 nm GaInN semiconductor laser diode with an internal saturable absorber layer for the first time. Stable passive mode locking was confirmed at a repetition rate of 840 MHz. Furthermore, hybrid mode-locking operation incorporating rf current modulation generated optical pulses of 20 ps duration and 0.4 W peak power. © 2009 American Institute of Physics.