Gate voltage control of carrier density and quantum capacitance is an important step for understanding the device physics and assessing the performance of nanoscale transistors. In this paper, we present a simple phenomenological model for the carrier density and quantum capacitance of graphene nanoribbon field-effect transistors as functions of gate voltage, Fermi level position and temperature. Quantum capacitance is calculated from the broadened density of states incorporating the presence of electron-hole puddles and possible finite lifetime of electronic states through a Gaussian broadening distribution. Thin gate-insulators of high-&x03BA; dielectric constant are used in our calculations in order to approach the quantum capacitance limit.
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