Molecular-beam epitaxy and characteristics of GaN[sub y]As[sub 1−x−y]Bi[sub x]

  • Huang W
  • Oe K
  • Feng G
 et al. 
  • 15

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Abstract

GaN/sub y/As/sub 1-x-y/Bi/sub x/ alloys were grown by molecular-beam epitaxy using solid Ga, Bi, and As sources and nitrogen radicals generated from nitrogen gas in rf plasma. Changing the growth temperature is found to be a convenient method for controlling the GaBi molar fraction in the alloy reproducibly. The photoluminescence (PL) spectra show that the PL peak energy of GaN/sub y/As/sub 1-x-y /Bi/sub x/ alloy decreased with increasing GaBi and GaN molar fractions. The redshift coefficients of ~62 meV/%Bi and ~130 meV/%N at the PL peak energy of GaN/sub y/As/sub 1-x-y/Bi/sub x/ were observed at room temperature. The temperature dependence of the PL peak energy in the temperature range of 150-300 K is much smaller than the temperature dependence of the band gap of InGaAsP. The temperature coefficients of GaAs/sub 1-x/Bi/sub x/ and GaN/sub y/As /sub 1-x-y/Bi/sub x/ band gaps are governed by the GaBi molar fraction and they decrease with increasing GaBi molar fraction. GaN/sub y/As/sub 1-x-y/Bi/sub x/ alloys with different PL peak energies and lattice matched to GaAs substrates were obtained. The photoluminescence peak energy was located at a predicted wavelength for the sample lattice matched to GaAs which was found to have the structure of Ga(N/sub 0.33/Bi/sub 0.67/)/sub z/As/sub 1-z/

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Authors

  • W. Huang

  • K. Oe

  • G. Feng

  • M. Yoshimoto

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