MOS device degradation due to total dose ionizing radiation in the natural space environment: A review

Abstract

This paper presents a review for the non-specialist of MOS device degradation due to total dose ionizing radiation in the natural space environment. Interface and oxide charge introduced in MOS dielectrics during ionizing radiation exposure cause changes in a number of device electrical parameters. Observed effects include: shifts in MOSFET threshold voltage, reduction of channel mobility, loss of drive capability and increase of leakage currents. Complex trade-offs between the interface and oxide trapped charge can occur in the natural space environment where the total dose is accumulated at a very low dose-rate. © 1990.