The unique property of ambipolar organic light-emitting field-effect transistors that the position of the light emission zone within the transistor channel can be controlled by the applied biases opens novel aspects for applications. In this contribution we demonstrate a transistor with electrically tuneable emission colour by taking advantage of the controlled displacement of the light emission zone. The colour change is achieved due to a colour conversion layer covering partially the transistor channel. Depending on the position of charge carrier recombination the emitted light of the transport layer or the converted light from the colour conversion layer can be detected. © 2011 Elsevier B.V. All rights reserved.
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