Optical and luminescence characteristics of thermally evaporated pentacene films on Si

  • Park S
  • Kim S
  • Kim J
 et al. 
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Abstract

We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120°C. Ellipsometric spectra of the films deposited at room temperature and 60°C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior. © 2002 American Institute of Physics.

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Authors

  • S.P. Park

  • S.S. Kim

  • J.H. Kim

  • C.N. Whang

  • S. Im

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