Optical and structure properties of amorphous Ge--Sb--Se films for ultrafast all-optical signal processing

  • Chen Y
  • Xu T
  • Shen X
 et al. 
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Abstract

In this paper, we deposited amorphous chalcogenide Ge--Sb--Se films using the RF sputtering method, then measured their optical and structural properties using various diagnosis tools. The linear refractive index and optical band-gap for as-deposited films were analyzed as a function of the chemical composi- tion and the mean coordination number (MCN). The third-order optical nonlinearities were predicted by applying the Z-scan method combined with a model developed by Sheik-Bahae. The relationship between film compositions and the optical properties was analyzed by Raman spectra in terms of structural evo- lution. The data suggests that the {\lq}{\lq}defect{\rq}{\rq} gap states in the network play an important role in the third- order optical nonlinearity of these chalcogenide films. The Ge20Sb15Se65 films most suitable for all-optical signal processing applications had large nonlinear refractive indices (À8.735 Â 10À15 m2 /W), moderate nonlinear absorption (8.592 Â 10À9m/W) and showed an ultrafast nonlinear response time (66 fs).

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Authors

  • Y Chen

  • T Xu

  • X Shen

  • R P Wang

  • S Zong

  • S Dai

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