Orbital disordering and the metal-insulator transition with hole doping in perovskite-type vanadium oxides

  • Fujioka J
  • Miyasaka S
  • Tokura Y
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Abstract

Filling-control metal-insulator transitions (MITs) and related electronic phase diagrams have been investigated for hole-doped vanadium oxides Pr1−xCaxVO3Pr1−xCaxVO3, Nd1−xSrxVO3Nd1−xSrxVO3, and Y1−xCaxVO3Y1−xCaxVO3 with perovskite structure. The increase of the doping level xx causes the melting of the GG-type (and CC-type) orbital order, prior to or concomitantly with the MIT, due partly to the doped-hole motion and partly to the random potential arising from the quenched disorder. In particular, the GG-type spin- and CC-type orbital-ordered phase present in Y1−xCaxVO3Y1−xCaxVO3 disappears immediately upon hole doping, around x=0.02x=0.02. On the other hand, the critical doping level xx for the MIT is governed by the electron-correlation strength of the undoped parent compound.

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Authors

  • J. Fujioka

  • S. Miyasaka

  • Y. Tokura

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