Organic field-effect transistors as high performance humidity sensors with rapid response, recovery time and remarkable ambient stability

  • Subbarao N
  • Gedda M
  • Iyer P
 et al. 
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Abstract

© 2016 Elsevier B.V.The stability of organic field-effect transistors (OFETs) under very high humidity condition has been the bottleneck in many applications. In this work, remarkable enhancement in ambient stability and performance of CuPc based OFETs are observed by exploiting the polarization of hydroxyl groups in Poly (vinyl alcohol) (PVA) dielectric layer, which is sandwiched between Al2O3 and Poly (methyl methacrylate) (PMMA) layer. The devices are used to fabricate OFETs based humidity sensors, which show exceptional ambient stability and rapid response to the water molecules in moisture. In a controlled experiment, the sensors demonstrate 0.73 s as response time and 0.52 s as recovery time. Such results are the fastest responses observed on humidity sensors fabricated based on OFETs. The enhanced responses of the sensors are due to the systematic polarization of the hydroxyl groups present in PVA layer by the additional dipole field arising from the adsorbed water molecules, which are also polarized under gate-field. The devices show no variation in threshold voltage as well as field-effect carrier mobility, measured throughout a year under ambient exposure. The specific design of the sensors with tri-layer dielectric system plays crucial role in enhancing the stability and moisture sensitivity, which can make the devices technologically very relevant.

Author-supplied keywords

  • [Anomalous bias-stress, Bias-stress, Humidity sens

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Authors

  • N.V.V. Subbarao

  • M. Gedda

  • P.K. Iyer

  • D.K. Goswami

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