Organic zener diodes: Tunneling across the gap in organic semiconductor materials

  • Kleemann H
  • Gutierrez R
  • Lindner F
 et al. 
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Abstract

Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the HOMO-LUMO gap of neigh- boring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.

Author-supplied keywords

  • Organic semiconductors
  • Zener diodes
  • molecular doping
  • organic pin-diodes
  • tunneling

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