The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics

  • Kim J
  • Jang J
  • Kim K
 et al. 
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Abstract

Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OLEDs) is achieved by varying dielectric functionalities. Based on this, we demonstrate the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs, and reveal the origin of the excellent device stability of OFETs employing fluorinated dielectrics.

Author-supplied keywords

  • fluorinated polymers
  • gate-bias stabilities
  • organic field-effect transistors

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