This work characterizes a GaN:Mg on silicon ultraviolet photodetector with a cutoff at 3.3 eV and a responsivity of 12 A/W at 4 V bias for optical intensities on the order of 1 W/m2 and below. A weak photovoltaic response is also reported. The photocurrent is nearly linear versus optical intensity for up to 10 W/m2. The responsivity increases nearly linearly with applied voltage up to 8 V, then the increase slows toward saturation. To explain this high responsivity in a direct gap semiconductor, it is hypothesized that holes are captured at either compensated Mg deep acceptor sites or Mg‐related trap/recombination centers, resulting in a greatly prolonged electron free‐carrier lifetime. © 1995 American Institute of Physics.
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