Photoluminescence and cathodoluminescence from nanostructured silicon surface

Abstract

We report the photoluminescence (PL) and cathodoluminescence (CL) study of nanostructured poly-crystalline silicon surface fabricated by lithography-less, reactive ion etching process. Photoluminescence in visible range at room temperature with peak position between 630 nm and 720 nm is observed without any oxidation or annealing steps. X-ray photoemission (XPS) and Auger electron spectroscopy (AES) revealed the presence of silicon oxide. The observed cathodoluminescence in green and red regions of the visible spectrum are due to nano-scaled tips and their coating with nonstoichiometric silicon oxide. © 2011 American Institute of Physics.