Plane dependent growth of GaN in supercritical basic ammonia

Abstract

The plane dependence of GaN grown in supercritical basic ammonia was investigated. Seed crystals with various surface crystallographic orientations were prepared and loaded for four separate growth runs. The growth thickness and crystal quality of GaN grown on each seed was evaluated by caliper and X-ray diffraction (XRD), respectively. These parameters were highly dependent on the orientation of the seed crystal. We achieved high crystalline quality with high growth rates utilizing semi-polar seed crystals. Also, the non-polar m-plane showed the narrowest XRD full width at half maximum (FWHM). © 2008 The Japan Society of Applied Physics.