Porous low dielectric constant materials for microelectronics

  • Baklanov M
  • Maex K
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Abstract

Materials with a low dielectric constant are required as interlayer dielectrics for the on-chip interconnection of ultra-large-scale integration devices to provide high speed, low dynamic power dissipation and low cross-talk noise. The selection of chemical compounds with low polarizability and the introduction of porosity result in a reduced dielectric constant. Integration of such materials into microelectronic circuits, however, poses a number of challenges, as the materials must meet strict requirements in terms of properties and reliability. These issues are the subject of the present paper.

Author-supplied keywords

  • Interconnect technology
  • Low dielectric constant (low-k) materials
  • Microelectronics
  • Porosity

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Authors

  • Mikhail R. Baklanov

  • Karen Maex

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