We present the preliminary results of the characterization of silicon detectors in terms of Photon Detection Efficiency (PDE). The precision measurements are performed at controlled temperature, using a specially suited setup based on a monochromator, an integrating sphere to randomize the incident light and a calibrated reference photodiode. We exploit a measurement technique that we recently devised, based on single photon counting with subtraction of dark noise, and avoiding as much as possible cross-talk and afterpulses. We describe in detail the experimental setups and the techniques utilized to measure the PDE. The achieved results are here discussed in order to establish a methodology capable to give very precise PDE values for solid-state photomultiplier detectors. © 2009 Elsevier B.V. All rights reserved.
Mendeley saves you time finding and organizing research
Choose a citation style from the tabs below