Preparation of conducting and transparent thin films of tin-doped indium oxide by magnetron sputtering

  • Buchanan M
  • Webb J
  • Williams D
  • 30


    Mendeley users who have this article in their library.
  • 137


    Citations of this article.


High‐quality 800‐Å‐thick films of tin‐doped indium oxide have been prepared by magnetron sputtering. It is shown that films with low resistivity (∼4×10−4 Ω cm) and high optical transmission (≳85% between 4000 and 8000 Å) can be prepared on low‐temperature (40–180 °C) substrates with O2 partial pressures of (2–7)×10−5 Torr.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • M. Buchanan

  • J. B. Webb

  • D. F. Williams

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free