Progress and outlook for mram technology

  • Tehrani S
  • Slaughter J
  • Chen E
 et al. 
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Abstract

We summarize the features of existing semiconductor memories and
compare them to Magnetoresistive Random Access Memory (MRAM),a
semiconductor memory with magnetic bits for nonvolatile storage. MRAM
architectures based on Giant Magnetoresistance (GMR) and Magnetic Tunnel
Junction (MTJ) cells are described. This paper will discuss our progress
on improving the material structures, memory bits, thermal stability of
the bits, and competitive architectures for GMR and MTJ based MRAM
memories as well as the potential of these memories in the commercial
memory market

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Authors

  • S. Tehrani

  • J. M. Slaughter

  • E. Chen

  • M. Durlam

  • J. Shi

  • M. Deherrera

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