Properties and phase transition of (Ti,Al)N thin films prepared by ion beam-assisted deposition

  • Budzynski P
  • Sielanko J
  • Surowiec Z
  • 11


    Mendeley users who have this article in their library.
  • 10


    Citations of this article.


(Ti,Al)N layers thinner than 0.35 μm were deposited on the Ti or Al substrates with the aluminium or titanium ion beam-assisted deposition (IBAD) method. Directly after the implantation, phase mixing was observed on the top sample layer. Mainly a layer of c-Ti1-xAlxN was formed on the surface of both samples. Underneath, there was a c-TiN layer on the titanium substrate and a c-AlN layer on the aluminium substrate. After annealing at 450 °C for 48 h, the internal layer in the sample deposited on the Ti substrate decomposed, forming a structure containing a mixture of the c-TiN and c-AlN phases. Annealing the sample made on the Al substrate caused a transformation of the external layer into Ti2AlN. Aluminium deposition on the aluminium substrate and nitrogen implantation led to the formation of the c-AlN phase. The process of sample annealing caused a partial transformation of the cubic phase (c-AlN) into a thermodynamically stable hexagonal h-AlN phase. The top layer of all tested samples had a columnar structure. Annealing led to a change in the column density and height. © 2008 Elsevier Ltd. All rights reserved.

Author-supplied keywords

  • A. Ternary alloy systems
  • B. Phase transformations
  • F. Atomic force microscopy
  • F. Diffraction
  • F. Secondary ion mass spectrometry

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free