Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth

  • Mawst L
  • Park J
  • Huang Y
 et al. 
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Abstract

Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.

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Authors

  • L. J. Mawst

  • J. H. Park

  • Y. Huang

  • J. Kirch

  • T. Kim

  • C. C. Liu

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