Progress in metal-organic chemical vapor deposition of high quality (000-1) N-polar (Al, Ga, In)N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key process components such as utilization of vicinal substrates, conditions ensuring a high surface mobility of species participating in the growth process, and low impurity incorporation. The high quality of the fabricated films enabled the demonstration of N-polar (Al, Ga, In)N based devices with excellent performance for transistor applications. Challenges related to the growth of high quality N-polar InGaN films are also presented.
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