Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides

  • Keller S
  • Li H
  • Laurent M
 et al. 
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Abstract

Progress in metal-organic chemical vapor deposition of high quality (000-1) N-polar (Al, Ga, In)N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key process components such as utilization of vicinal substrates, conditions ensuring a high surface mobility of species participating in the growth process, and low impurity incorporation. The high quality of the fabricated films enabled the demonstration of N-polar (Al, Ga, In)N based devices with excellent performance for transistor applications. Challenges related to the growth of high quality N-polar InGaN films are also presented.

Author-supplied keywords

  • AlGaN
  • GaN
  • InAlN
  • InGaN
  • N face
  • N polar
  • metal organic chemical vapor deposition

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Authors

  • Stacia Keller

  • Haoran Li

  • Matthew Laurent

  • Yanling Hu

  • Nathan Pfaff

  • Jing Lu

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