Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films

  • Oligschlaeger R
  • Waser R
  • Meyer R
 et al. 
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R. Oligschlaeger and R. Waser Institut für Werkstoffe der Elektrotechnik, RWTH Aachen, 52074 Aachen, Germany R. Meyer , S. Karthäuser , and R. Dittmann CNI, FZ Juelich, 52425 Juelich, Germany We report on resistive switching of capacitor-like SrRuO3/Ba0.7Sr0.3TiO3/Pt thin films epitaxially grown on SrTiO3 substrates. We observe a weak but stable hysteresis in the current-voltage curve. By applying short voltage pulses, a high or low resistive state as well as intermediate states can be addressed even at room temperature. We demonstrate a multiple-branch hysteresis curve corresponding to multilevel switching modus revealing different subloops for different write voltages. Furthermore reliability issues such as cycling endurance and data retention are presented. Read-write operations over 10 000 cycles show a fatigue-like drift of both resistance states. No data loss is found upon continuous readout. ©2006 American Institute of Physics History:Received 14 October 2005; accepted 9 December 2005; published 23 January 2006Permalink:

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  • R. Oligschlaeger

  • R. Waser

  • R. Meyer

  • S. Karthäuser

  • R. Dittmann

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