The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes

  • Jang H
  • Ryu S
  • Yu H
 et al. 
  • 11


    Mendeley users who have this article in their library.
  • 23


    Citations of this article.


We report effective methods for improving light extraction efficiency for n-side-up vertical InGaN light-emitting diodes (LEDs). For the LEDs with high reflectance Ag-based p-contacts, nanotexturing of the n-GaN surface using a combination of photonic crystals and photochemical etching drastically enhances the efficiency of extraction from the top surface. In contrast, the LEDs with low reflectance Au-based p-contacts show significantly less improvement through the nanotexturing. These experimental results indicate the critical role of high reflectance p-contacts as well as surface texturing in improving the light extraction efficiency of the vertical LEDs for solid-state lighting.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • Ho Won JangSeoul National University

  • Seong Wook Ryu

  • Hak Ki Yu

  • Sanghan Lee

  • Jong Lam Lee

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free